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Bistable state in magnetic nanostructures

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Abstract

The conditions of the existence of a bistable state in a ferromagnetic layer included in the magnetoresistive memory switched by the electric field have been investigated. Such states, which correspond to the local minima of the Gibbs potential, correspond to mutually perpendicular magnetization directions. Evaluations of a minimal volume of the ferromagnetic layer, at which the barrier between the states exceeds the superparamagnetic limit, are obtained for a series of promising materials, and possibilities of its decrease are considered.

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Authors and Affiliations

  1. Moscow State Technical University of Radioengineering, Electronics and Automation, pr. Vernadskogo 78, Moscow, 119454, Russia

    D. L. Vinokurov & A. I. Morosov

  2. Moscow Institute of Physics and Technology (State University), Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700, Russia

    A. I. Morosov

Authors
  1. D. L. Vinokurov
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  2. A. I. Morosov
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Correspondence to A. I. Morosov.

Additional information

Original Russian Text © D.L. Vinokurov, A.I. Morosov, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 12, pp. 2355–2360.

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Vinokurov, D.L., Morosov, A.I. Bistable state in magnetic nanostructures. Phys. Solid State 56, 2440–2445 (2014). https://doi.org/10.1134/S106378341412035X

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  • DOI: https://doi.org/10.1134/S106378341412035X

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