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Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

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Abstract

The current-voltage characteristics of n-Si-p-(Si2)1 − x − y (Ge2) x (GaAs) y (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94), p-Si-n-(Si2)1 − x (CdS) x (0 ≤ x ≤ 0.01), n-GaAs-p-(InSb)1 − x (Sn2) x (0 ≤ x ≤ 0.05), and n-CdS-p-CdTe heterostructures have been studied. It has been found that the current-voltage characteristics of these structures contain a portion of sublinear increase in the current with a voltage V ≈ V 0exp(Jad). The concentrations of deep impurities responsible for the appearance of the sublinear portion of the current-voltage characteristic have been estimated. The experimental results have been explained based on the theory of the injection depletion effect.

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Authors and Affiliations

  1. Starodubtsev Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2, Tashkent, 700084, Uzbekistan

    Sh. N. Usmonov, A. S. Saidov & A. Yu. Leiderman

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  1. Sh. N. Usmonov
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  2. A. S. Saidov
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  3. A. Yu. Leiderman
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Correspondence to Sh. N. Usmonov.

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Original Russian Text © Sh.N. Usmonov, A.S. Saidov, A.Yu. Leiderman, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 12, pp. 2319–2325.

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Usmonov, S.N., Saidov, A.S. & Leiderman, A.Y. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x . Phys. Solid State 56, 2401–2407 (2014). https://doi.org/10.1134/S1063783414120348

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  • DOI: https://doi.org/10.1134/S1063783414120348

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