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Effect of carrier heating on photovoltage in FET

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Abstract

Within the framework of the Boltzmann equation, we have calculated the dc electric current and emf induced in a two-dimensional system by a high-frequency field of an electromagnetic wave or by an electric field of a plasmon wave. It has been established that the generated current consists of two contributions, one of which is proportional to the real part of the wave vector projection of the exciting wave onto the interface plane and represents the electron drag effect, and the other contribution is proportional to the extinction coefficient of the wave in the interface plane. It has been shown that the main cause of the second contribution is a nonuniform electron heating created by the wave and controlled by the energy relaxation time of the electron gas. In field-effect transistors (FET), the heating mechanism of the electric-current formation can significantly exceed the current calculated neglecting the heating.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    E. L. Ivchenko

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  1. E. L. Ivchenko
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Correspondence to E. L. Ivchenko.

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Original Russian Text © E.L. Ivchenko, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 12, pp. 2426–2429.

The article was translated by the author.

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Ivchenko, E.L. Effect of carrier heating on photovoltage in FET. Phys. Solid State 56, 2514–2518 (2014). https://doi.org/10.1134/S1063783414120142

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