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Kinetics of oxidation of subsurface layers of 29Si-enriched silicon in a magnetic field

  • Surface Physics and Thin Films
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Abstract

It has been found that, in a magnetic field of ∼0.1 T, the kinetics of oxidation of the silicon surface has a different behavior. The rate of formation of SiO x complexes containing 29Si nuclei with spin 1/2 (72.76%) at the initial stage of oxidation is two times higher than the rate of reaction involving complexes containing 28Si and 30Si nuclei with zero spins.

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Correspondence to R. B. Morgunov.

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Original Russian Text © O.V. Koplak, A.I. Dmitriev, R.B. Morgunov, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 7, pp. 1391–1396.

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Koplak, O.V., Dmitriev, A.I. & Morgunov, R.B. Kinetics of oxidation of subsurface layers of 29Si-enriched silicon in a magnetic field. Phys. Solid State 56, 1443–1448 (2014). https://doi.org/10.1134/S106378341407021X

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  • DOI: https://doi.org/10.1134/S106378341407021X

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