Abstract
It has been found that, in a magnetic field of ∼0.1 T, the kinetics of oxidation of the silicon surface has a different behavior. The rate of formation of SiO x complexes containing 29Si nuclei with spin 1/2 (72.76%) at the initial stage of oxidation is two times higher than the rate of reaction involving complexes containing 28Si and 30Si nuclei with zero spins.
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References
D. Kaplan, I. Solomon, and N. F. Mott, J. Phys. Lett. 39, L51 (1978).
S. C. Cavenett, Adv. Phys. 30, 475 (1981).
P. G. Baranov and N. G. Romanov, Appl. Magn. Reson. 2, 361 (1991).
N. T. Bagraev and L. S. Vlasenko, Sov. Phys. Solid State 21(1), 70 (1979).
S. V. Broude, V. A. Grazhulis, V. V. Kveder, and Yu. A. Osip’yan, Sov. Phys. JETP 39(4), 721 (1974).
V. V. Kveder, Yu. A. Osip’yan, and A. I. Shalynin, Sov. Phys. JETP 56(2), 389 (1982).
I. Solomon, D. Biegelsen, and J. C. Knights, Solid State Commun. 22, 505 (1977).
D. J. Lepine, Phys.Rev. B: Solid State 6, 436 (1972).
A. Bongiorno and A. Pasquarello, Phys. Rev. Lett. 93, 086102 (2004).
O. Koplak, A. Dmitriev, T. Kakeshita, and R. Morgunov, J. Appl. Phys. 110, 044905 (2011).
O. V. Koplak, A. I. Dmitriev, and R. B. Morgunov, Phys. Solid State 54(7), 1433 (2012).
O. Koplak, R. Morgunov, and A. Buchachenko, Chem. Phys. Lett. 560, 29 (2013).
O. V. Koplak, R. B. Morgunov, and A. L. Buchachenko, JETP Lett. 96(2), 102 (2012).
R. B. Morgunov and A. L. Buchachenko, Phys. Rev. B: Condens. Matter 82, 014115 (2010).
H. Hayashi, T. Itahashi, and K. M. Itoh, Phys. Rev. B: Condens. Matter 80, 045201 (2009).
G. E. Pake, J. Chem. Phys. 16, 327 (1948).
C. G. van de Walle and P. E. Blochl, Phys. Rev. B: Condens. Matter 47, 4244 (1993).
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Original Russian Text © O.V. Koplak, A.I. Dmitriev, R.B. Morgunov, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 7, pp. 1391–1396.
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Koplak, O.V., Dmitriev, A.I. & Morgunov, R.B. Kinetics of oxidation of subsurface layers of 29Si-enriched silicon in a magnetic field. Phys. Solid State 56, 1443–1448 (2014). https://doi.org/10.1134/S106378341407021X
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DOI: https://doi.org/10.1134/S106378341407021X