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Anisotropy of the EPR line shape of dislocation acceptor centers in semiconducting type Ic diamonds

  • Semiconductors
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Abstract

The shape anisotropy of the EPR lines of broken carbon bonds in a dislocation core with an edge component in natural semiconducting type Ic diamonds has been investigated. It has been found that electrically active acceptor centers are formed at dislocation steps, jogs, or kinks. The distance between the paramagnetic centers is determined.

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Authors and Affiliations

  1. Donbas National Academy of Civil Engineering and Architecture, ul. Derzhavina 2, Makeyevka, Donetsk oblast, 86123, Ukraine

    S. N. Samsonenko

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  1. S. N. Samsonenko
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Correspondence to S. N. Samsonenko.

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Original Russian Text © S.N. Samsonenko, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 3, pp. 431–434.

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Samsonenko, S.N. Anisotropy of the EPR line shape of dislocation acceptor centers in semiconducting type Ic diamonds. Phys. Solid State 56, 438–441 (2014). https://doi.org/10.1134/S1063783414030287

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  • DOI: https://doi.org/10.1134/S1063783414030287

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