Abstract
The transport and magnetic properties of junctions created in La0.67Sr0.33MnO3 thin films epitaxially grown on substrates with a bicrystal boundary have been investigated. In tilted neodymium gallate bicrystal substrates, the NdGaO3(110) planes are inclined at angles of 12° and 38°. The temperature dependences of the electrical resistance, magnetoresistance, and differential conductance of the junctions at different voltages have been measured and analyzed. It has been found that the magnetoresistance and electrical resistance of the junction significantly increase with an increase in the misorientation angle, even though the misorientation of the easy magnetization axes remains nearly unchanged. The ratio of the spin-dependent and spin-independent contributions to the conductance of the bicrystal junction increases by almost an order of magnitude with an increase in the misorientation angle from 12° to 38°. The magnetoresistance of the junction increases with decreasing temperature, which is most likely associated with an increase of the magnetic polarization of the electrons. It has been shown that, at low (liquid-helium) temperatures, the conductance depends on the voltage V according to the law V 1/2, which indicates the dominant contribution from the electron-electron interaction to the electrical resistance of the junction. An increase in the temperature leads to a decrease in this contribution and an increase in the contribution proportional to V 3/2, which is characteristic of the mechanism involving inelastic spin scattering by surface antiferromagnetic magnons.
Similar content being viewed by others
References
I. Zutic, Rev. Mod. Phys. 76, 323 (2004).
J. O’Donnel, M. Onellion, and M. S. Rzchowski, Phys. Rev. B: Condens. Matter 55, 5873 (1997).
N. D. Mathur, G. Burnell, S. P. Isaac, T. J. Jackson, B.-S. Teo, J. L MacManus-Driscoll, L. F. Cohen, J. E. Evetts, and M. G. Blamire, Nature (London) 387, 266 (1997).
Y.-A. Soh, P. G. Evans, Z. Cai, B. Lai, C.-Y. Kim, G. Aeppli, N. D. Mathur, M. G. Blamire, and E. D. Isaacs, J. Appl. Phys. 91(10), 7742 (2002).
M. Paranjape, J. Mitra, A. K. Raychaudhuri, N. K. Todd, N. D. Mathur, and M. G. Blamire, Phys. Rev. B: Condens. Matter 68(14), 144409 (2003).
N. K. Todd, N. D. Mathur, S. P. Isaac, J. E. Evetts, and M. G. Blamire, J. Appl. Phys. 85(10), 7263 (1999).
K. Steenbeck, T. Eick, K. Kirsch, H. G. Schmidt, and E. Steinbei-, Appl. Phys. Lett. 73, 2506 (1998).
C. Höfener, J. B. Philipp, J. Klein, L. Alff, A. Marx, B. Buchner, and R. Gross, Europhys. Lett. 50, 681 (2000).
C. A. Dartora and G. G. Cabrera, J. Appl. Phys. 95, R11 (2004).
C. H. Shang, J. Nowak, R. Jansen, and J. S. Moodera, Phys. Rev. B: Condens. Matter 58, R2917 (1998).
I. V. Borisenko, I. M. Kotelyanski, A. V. Shadrin, P. V. Komissinski, and G. A. Ovsyannikov, IEEE Trans. Appl. Supercond. 15, 165 (2005).
I. V. Borisenko and G. A. Ovsyannikov, Phys. Solid State 51(2), 309 (2009).
G. Alejandro, L. B. Steren, H. Pastoriza, D. Vega, M. Granada, J. C. Royas Sánchez, M. Sirena, and B. Alascio, J. Phys.: Condens. Matter 22, 346007 (2010).
A. M. Petrzhik, V. V. Demidov, G. A. Ovsyannikov, I. V. Borisenko, and A. V. Shadrin, JETP 115(5), 876 (2012).
V. V. Demidov, I. V. Borisenko, A. A. Klimov, G. A. Ovsyannikov, A. M. Petrzhik, and S. A. Nikitov, JETP 112(5), 825 (2011).
H. Boschker, M. Mathews, E. P. Houwman, H. Nishikawa, A. Vailionis, G. Koster, G. Rijnders, and D. H. A. Blank, Phys. Rev. B: Condens. Matter 79, 214425 (2009).
M. Julliere, Phys. Lett. A 54, 225 (1975).
J. C. Slonczewski, Phys. Rev. B: Condens. Matter 39, 6995 (1989).
R. Gunnarsson, Z. G. Ivanov, C. Dobourdieu, and H. Russel, Phys. Rev. B: Condens. Matter 69, 054413 (2004).
J.-H. Park, E. Vescovo, H.-J. Kim, C. Kwon, R. Ramesh, and T. Venkatesan, Phys. Rev. Lett. 81, 1953 (1998).
V. Garcia, M. Bibes, A. Barthélémy, M. Bowen, E. Jacquet, J.-P. Contour, and A. Fert, Phys. Rev. B: Condens. Matter 69, 052403 (2004).
W. Westerburg, F. Martin, S. Friedrich, M. Maier, and G. Jakob, J. Appl. Phys. 86, 2173 (1999).
P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. 57, 287 (1985).
M. E. Gershenzon, V. N. Gubankov, and M. I. Falei, Sov. Phys. JETP 90(6), 1287 (1986).
L. I. Glazman and K. A. Matveev, Sov. Phys. JETP 67(6), 1276 (1988).
F. Guinea, Phys. Rev. B: Condens. Matter 58, 9212 (1998).
N. Khare, U. P. Moharil, A. K. Gupta, A. K. Raychaudhuri, S. P. Pai, and R. Pinto, Appl. Phys. Lett. 81, 325 (2002).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.M. Petrzhik, G.A. Ovsyannikov, V.V. Demidov, A.V. Shadrin, I.V. Borisenko, 2013, published in Fizika Tverdogo Tela, 2013, Vol. 55, No. 4, pp. 697–701.
Rights and permissions
About this article
Cite this article
Petrzhik, A.M., Ovsyannikov, G.A., Demidov, V.V. et al. Electron transport in manganite bicrystal junctions. Phys. Solid State 55, 759–764 (2013). https://doi.org/10.1134/S1063783413040239
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783413040239