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“Anomalous” spectral photoresistive field effect in CdS crystals caused by the screening of the electron-hole interaction

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Abstract

The changes observed in low-temperature (T = 77 K) near-band-edge photoconductivity spectra of CdS crystals in response to an external transverse electric field applied to the sample surface have been investigated. An analysis of the “anomalous” character of these changes for a number of crystals has revealed a significant role of the near-surface effects of screening of the electron-hole interaction in the formation of near-band-edge photoconductivity spectra of CdS crystals with a technological excess of cadmium near the surface. It has been shown that the depletion (enrichment) transverse electric field leads to a weakening (enhancement) of screening effects in the photoconductivity spectra of the CdS crystals.

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Correspondence to A. S. Batyrev.

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Original Russian Text © A.S. Batyrev, R.A. Bisengaliev, B.V. Novikov, 2013, published in Fizika Tverdogo Tela, 2013, Vol. 55, No. 4, pp. 639–644.

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Batyrev, A.S., Bisengaliev, R.A. & Novikov, B.V. “Anomalous” spectral photoresistive field effect in CdS crystals caused by the screening of the electron-hole interaction. Phys. Solid State 55, 696–701 (2013). https://doi.org/10.1134/S1063783413040021

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  • DOI: https://doi.org/10.1134/S1063783413040021

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