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Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates

Abstract

The stress-strain state in thin structured gallium nitride films on sapphire substrates containing open pores has been simulated. The results have been obtained by the finite element method in the commercial program complex. The stress intensity factor K I has been calculated for the model considering a crack at the GaN/sapphire interface near an open pore. Based on the calculations of elastic fields, the redistribution of stresses by a structure with an ordered array of open pores in gallium nitride films has been estimated.

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Correspondence to I. N. Ivukin.

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Original Russian Text © I.N. Ivukin, D.M. Artem’ev, V.E. Bugrov, M.A. Odnoblyudov, A.E. Romanov, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 12, pp. 2294–2297.

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Ivukin, I.N., Artem’ev, D.M., Bugrov, V.E. et al. Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates. Phys. Solid State 54, 2421–2424 (2012). https://doi.org/10.1134/S1063783412120165

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  • DOI: https://doi.org/10.1134/S1063783412120165

Keywords

  • Stress Intensity Factor
  • Sapphire
  • Crack Length
  • Crack Front
  • Sapphire Substrate