Abstract
Thin SnS films are of interest for optoelectronics. The influence of the preparation modes on the microstructure and electrical properties of thin SnS films obtained by the hot-wall method on substrates made of pure glass and glass with a molybdenum sublayer has been investigated. It has been established that the formation of SnS films with two texture types (111) and (010) is possible on the substrates made of pure glass, depending on the mode. The resistivity and the temperature coefficient of thermoelectric power of the SnS films on glass vary in the range from 12 to 817 Ω cm and from 37 to 597 μV/K, respectively, depending on the preparation modes. The activation energy is 0.11–0.12 eV.
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Original Russian Text © S.A. Bashkirov, V.F. Gremenok, V.A. Ivanov, V.V. Shevtsova, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 12, pp. 2372–2377.
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Bashkirov, S.A., Gremenok, V.F., Ivanov, V.A. et al. Microstructure and electrical properties of SnS thin films. Phys. Solid State 54, 2497–2502 (2012). https://doi.org/10.1134/S1063783412120049
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DOI: https://doi.org/10.1134/S1063783412120049