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Electrical and optical properties of light-emitting field-effect transistors based on MEH-PPV polymer composite films with ZnO nanoparticles

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Abstract

The optical and electrical properties of light-emitting field-effect transistor structures with an active layer based on nanocomposite films containing zinc oxide (ZnO) nanoparticles dispersed in the matrix of the soluble conjugated polymer MEH-PPV have been investigated. It has been found that the current-voltage characteristics of the field-effect transistor based on MEH-PPV: ZnO films with a composite component ratio of 2: 1 have an ambipolar character, and the mobilities of electrons and holes in these structures at a temperature of 300 K reach high values up to ∼1.2 and ∼1.4 cm2/V s, respectively, which are close to the mobilities in fieldeffect transistors based on ZnO films. It has been shown that the ambipolar field-effect transistor based on MEH-PPV: ZnO films emits light at both positive and negative gate bias voltages. The mechanisms of injection, charge carrier transport, and radiative recombination in the studied structures have been discussed.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. N. Aleshin, I. P. Shcherbakov, F. S. Fedichkin & P. E. Gusakov

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  1. A. N. Aleshin
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  2. I. P. Shcherbakov
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  3. F. S. Fedichkin
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  4. P. E. Gusakov
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Correspondence to A. N. Aleshin.

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Original Russian Text © A.N. Aleshin, I.P. Shcherbakov, F.S. Fedichkin, P.E. Gusakov, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 12, pp. 2388–2393.

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Aleshin, A.N., Shcherbakov, I.P., Fedichkin, F.S. et al. Electrical and optical properties of light-emitting field-effect transistors based on MEH-PPV polymer composite films with ZnO nanoparticles. Phys. Solid State 54, 2508–2513 (2012). https://doi.org/10.1134/S1063783412120025

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  • DOI: https://doi.org/10.1134/S1063783412120025

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