Abstract
Alternating current resistivity measurements have been performed for the first time on intercalated Cu x HfSe2 (0 ≤ x ≤ 0.18) samples using the impedance spectroscopy technique together with direct current measurements. The results obtained indicate the hopping mechanism of charge transport in Cu x HfSe2 compounds. It has been found that an increase in the copper content in samples enhances relaxation processes. The ac conductivity exhibits frequency dispersion described by the universal dynamic response.
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Original Russian Text © V.G. Pleshchev, N.V. Baranov, N.V. Melnikov, N.V. Selezneva, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 7, pp. 1271–1275.
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Pleshchev, V.G., Baranov, N.V., Melnikova, N.V. et al. Charge transport mechanism in intercalated Cu x HfSe2 compounds. Phys. Solid State 54, 1348–1352 (2012). https://doi.org/10.1134/S1063783412070293
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DOI: https://doi.org/10.1134/S1063783412070293