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X-ray and magnetic-field-enhanced change in physical characteristics of silicon crystals

  • Mechanical Properties, Physics of Strength, and Plasticity
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Abstract

The effect of low-energy (W = 8 keV) low-dose ((0.3–7.3) × 102 Gy) radiation and a dc magnetic field (B = 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which manifest themselves upon only X-ray exposure and combined (X-ray and magnetic) exposure, have been revealed.

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Authors and Affiliations

  1. Taras Shevchenko National University of Kyiv, ul. Volodimirska 60, Kyiv, 01601, Ukraine

    V. A. Makara, L. P. Steblenko, A. N. Krit, D. V. Kalinichenko, A. N. Kurylyuk & S. N. Naumenko

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  1. V. A. Makara
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  2. L. P. Steblenko
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  3. A. N. Krit
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  4. D. V. Kalinichenko
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  5. A. N. Kurylyuk
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  6. S. N. Naumenko
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Corresponding author

Correspondence to A. N. Kurylyuk.

Additional information

Original Russian Text © V.A. Makara, L.P. Steblenko, A.N. Krit, D.V. Kalinichenko, A.N. Kurylyuk, S.N. Naumenko, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 7, pp. 1356–1360.

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Makara, V.A., Steblenko, L.P., Krit, A.N. et al. X-ray and magnetic-field-enhanced change in physical characteristics of silicon crystals. Phys. Solid State 54, 1440–1444 (2012). https://doi.org/10.1134/S1063783412070244

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  • DOI: https://doi.org/10.1134/S1063783412070244

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