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Effect of temperature conditions of ion implantation on percolation ferromagnetism in Ge0.98Mn0.02 thin films

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Abstract

The effect of temperature conditions of ion implantation on the magnetic properties of Ge0.98Mn0.02 thin films has been studied. It has been shown that a decrease in the implantation temperature significantly increases the temperature of percolation magnetic ordering in the subsystem of dispersed Mn2+ ions. It has been demonstrated that the observed effect can be due to suppression of the thermally activated aggregation of Mn2+ ions into Ge3Mn5 clusters and increase in their concentration in the dispersed state.

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Authors and Affiliations

  1. Institute of Problems of Chemical Physics, Russian Academy of Sciences, pr. Akademika Semenova 1, Chernogolovka, Moscow oblast, 142432, Russia

    A. I. Dmitriev & R. B. Morgunov

  2. Research and Training Center “Physical and Chemical Materials Science,”, Kyiv Taras Shevchenko University and National Academy of Sciences of Ukraine, ul. Volodimirska 64, Kyiv, 01033, Ukraine

    O. V. Koplak

Authors
  1. A. I. Dmitriev
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  2. O. V. Koplak
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  3. R. B. Morgunov
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Correspondence to A. I. Dmitriev.

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Original Russian Text © A.I. Dmitriev, O.V. Koplak, R.B. Morgunov, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 7, pp. 1292–1295.

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Dmitriev, A.I., Koplak, O.V. & Morgunov, R.B. Effect of temperature conditions of ion implantation on percolation ferromagnetism in Ge0.98Mn0.02 thin films. Phys. Solid State 54, 1370–1373 (2012). https://doi.org/10.1134/S1063783412070141

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