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Double pulse heterothermal technology for the formation of domain structures in ferroelectrics

  • Proceedings of the XIX All-Russian Conference on Physics of Ferroelectrics (VKS-XIX)
  • Moscow, Russia, June 19–23, 2011
  • Published:
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Abstract

A technology for the formation of one- and two-dimensional structures by means of interfering (electromagnetic or acoustic) waves and a homogeneous electric field has been proposed. This technology has made it possible to retune the spatial period of the structure during its operation by varying the frequency of interfering waves and the angles of their incidence onto a crystal. It has been shown that the duration of the technological cycle slightly exceeds the domain switching time. The technology is applicable to crystals of LiNbO3, KTiOPO4 (with a high potassium content), and some others.

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Authors and Affiliations

  1. Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), pr. Vernadskogo 78, Moscow, 119454, Russia

    V. V. Krutov, E. A. Zasovin, A. S. Sigov & A. A. Shchuka

  2. Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia

    V. G. Mikhalevich

Authors
  1. V. V. Krutov
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  2. E. A. Zasovin
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  3. V. G. Mikhalevich
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  4. A. S. Sigov
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  5. A. A. Shchuka
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Correspondence to V. V. Krutov.

Additional information

Original Russian Text © V.V. Krutov, E.A. Zasovin, V.G. Mikhalevich, A.S. Sigov, A.A. Shchuka, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 5, pp. 908–910.

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Krutov, V.V., Zasovin, E.A., Mikhalevich, V.G. et al. Double pulse heterothermal technology for the formation of domain structures in ferroelectrics. Phys. Solid State 54, 965–967 (2012). https://doi.org/10.1134/S1063783412050216

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  • DOI: https://doi.org/10.1134/S1063783412050216

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