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Spreading resistance microscopy of polycrystalline and single-crystal ferroelectric films

  • Proceedings of the XIX All-Russian Conference on Physics of Ferroelectrics (VKS-XIX)
  • Moscow, Russia, June 19–23, 2011
  • Published:
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Abstract

Thin films based on lead zirconate titanate with stoichiometric composition near the morphotropic boundary have been studied using atomic-force microscopy methods. The dependence of the local conductivity on the local polarization direction has been observed for all samples, independently of substrate type, deposition method, and film thickness. It has been shown that the current response to the applied voltage exhibits a long current relaxation, about several tens of seconds, which is two to three orders of magnitude greater than the current relaxation time in an external circuit, associated with the ferroelectric domain switching. The conductivity features have been explained by recharging of traps localized at ferroelectric grain boundaries near electrodes and involved in polarization charge screening.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    E. V. Gushchina, A. V. Ankudinov, L. A. Delimova, V. S. Yuferev & I. V. Grekhov

  2. St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskii pr. 49, St. Petersburg, 197101, Russia

    A. V. Ankudinov

Authors
  1. E. V. Gushchina
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  2. A. V. Ankudinov
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  3. L. A. Delimova
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  4. V. S. Yuferev
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  5. I. V. Grekhov
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Corresponding author

Correspondence to E. V. Gushchina.

Additional information

Original Russian Text © E.V. Gushchina, A.V. Ankudinov, L.A. Delimova, V.S. Yuferev, I.V. Grekhov, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 5, pp. 944–946.

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Gushchina, E.V., Ankudinov, A.V., Delimova, L.A. et al. Spreading resistance microscopy of polycrystalline and single-crystal ferroelectric films. Phys. Solid State 54, 1005–1007 (2012). https://doi.org/10.1134/S1063783412050150

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  • DOI: https://doi.org/10.1134/S1063783412050150

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