Abstract
The single-electron states in a quantized cylindrical layer have been considered in the presence of a moderate homogeneous electric field, when the energy imparted to a charge carrier by the electric field becomes comparable to the energy of rotational motion of this particle. The corresponding energy spectrum and the envelopes of the wave functions of charge carriers in the layer have been obtained in an explicit form. The electro-optical absorption band of a weak electromagnetic wave has been calculated. It has been found that the absorption intensity increases with an increase in the intensity of the electric field. The external electric field leads to an explicit dependence of the absorption intensity on the effective masses of charge carriers. The absorption intensity decreases as the difference between the effective masses of charge carriers increases. There is also an effective broadening of the band gap, which is determined by the geometrical dimensions of the sample and the magnitude of the external field.
Similar content being viewed by others
References
M. Law, J. Goldberger, and P. Yang, Annu. Rev. Mater. Res. 34, 83 (2004); J. Martine-Duart, R. J. Martin-Palmer, and F. Agullo-Rueda, Nanotechnology for Microelectronics and Optoelectronics (Cambridge University Press, New York, 2005).
G. Shen, Y. Bando, and D. Golberg, Int. J. Nanotechnol. 4, 730 (2007); Ch. Bae, H. Yoo, S. Kim, K. Lee, J. Kim, M. A. Sung, and H. Shin, Chem. Mater. 20, 756 (2008).
Li Xiuling, J. Phys. D: Appl. Phys. 41, 193001 (2008).
J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H.-J. Choi, and P. Yang, Nature (London) 422, 599 (2003); J. Goldberger, R. Fan, and P. Yang, Acc. Chem. Res. 39, 239 (2006); J. M. de Almeida, Phys. Lett. A 374, 877 (2010); S. Adachi, Properties of Semiconductors Alloys: Group-IV, III-V and II–VI Semiconductors (Wiley, New York, 2009).
N. V. Tkach, I. V. Pronishin, and A. M. Makhanets, Phys. Solid State 40(3), 514 (1998).
N. V. Tkach and V. A. Golovatskii, Phys. Solid State 43(2), 365 (2001).
R. N. Musin and X.-Q. Wang, Phys. Rev. B: Condens. Matter 74, 165308 (2006); L. E. Ramos, J. Furthmüller, and F. Bechstedt, Phys. Rev. B: Condens. Matter 72, 045351 (2005).
N. Malkova and C. Z. Ning, Phys. Rev. B: Condens. Matter 75, 155407 (2007).
V. A. Harutyunyan, K. S. Aramjan, and H. Sh. Petrosjan, Physica E (Amsterdam) 21(1), 111 (2004).
V. A. Arutyunyan, S. L. Arutyunyan, G. O. Demirchyan, and G. Sh. Petrosyan, Semiconductors 39(7), 805 (2005).
V. A. Harutyunyan, Appl. Surf. Sci. 256, 455 (2009).
V. A. Harutyunyan, Physica E (Amsterdam) 41(4), 695 (2009).
V. A. Harutyunyan, Phys. Solid State 52(8), 1744 (2010).
V. A. Harutyunyan, J. Appl. Phys. 109(1), 014325 (2011).
V. A. Harutyunyan, Physica E (Amsterdam) 39(1), 37 (2007).
J. W. Haus, H. S. Zhou, I. Honma, and H. Komiyama, Phys. Rev. B: Condens. Matter 47, 1359 (1993).
D. Schooss, A. Mews, A. Eychmüller, and H. Weller, Phys. Rev. B: Condens. Matter 49, 17072 (1994).
V. G. Kogan and V. Z. Kresin, Sov. Phys. Solid State 11(11), 2618 (1969).
W. R. Smythe, Static and Dynamic Electricity (McGraw-Hill, New York, 1950; Inostrannaya Literatura, Moscow, 1954).
E. Kamke, Differentialgleichungen Losungsmethoden und Losungen (Chelsea, New York, 1959; Nauka, Moscow, 1971) [in German and in Russian].
H. Bateman and A. Erdélyi, Higher Transcendental Functions (McGraw-Hill, New York, 1953; Nauka, Moscow, 1967), Vol. 3.
A. P. Prudnikov, Yu. A. Brychkov, and O. I. Marichev, Integrals and Series, Vol. 1: Elementary Functions (Nauka, Moscow, 1981; Gordon and Breach, New York, 1986).
H. Haug and S. Koch, Quantum Theory of the Optical and Electronic Properties of Semiconductors, 4th ed. (World Scientific, Singapore, 2006); G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Les Editions de Physique, Les Ulis, France, 1998).
O. Stier, Electronic and Optical Properties of Quantum Dots and Wires (Wissenschaft und Technik, Berlin, 2001); P. Harrison, Quantum Wells, Wires and Dots: Theoretical and Computational Physics (Wiley, New York, 2005).
B. M. Askerov, Electron Transport Phenomena in Semiconductors (Nauka, Moscow, 1985; World Scientific, Singapore, 1994).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.A. Harutyunyan, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 5, pp. 1028–1034.
Rights and permissions
About this article
Cite this article
Harutyunyan, V.A. Electro-optical transitions in a semiconductor cylindrical nanolayer. Phys. Solid State 54, 1096–1103 (2012). https://doi.org/10.1134/S1063783412050046
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783412050046