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Large-scale potential fluctuations caused by SiO x compositional inhomogeneity

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Abstract

The short-range order in amorphous SiO x (0 ≤ x ≤ 2) films has been studied by high-resolution X-ray photoelectron spectroscopy. Both the random bonding and random mixture models do not describe experimental photoelectron spectra of SiO x (x ≤ 2). An intermediate model of the SiO x structure has been proposed. The measured photoelectron spectra of the SiO x (x ≤ 2) valence band indicate the presence of the silicon phase and silicon oxide.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Akademika Lavrentieva 13, Novosibirsk, 630090, Russia

    Yu. N. Novikov & V. A. Gritsenko

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  1. Yu. N. Novikov
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  2. V. A. Gritsenko
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Correspondence to Yu. N. Novikov.

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Original Russian Text © Yu.N. Novikov, V.A. Gritsenko, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 3, pp. 465–470.

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Novikov, Y.N., Gritsenko, V.A. Large-scale potential fluctuations caused by SiO x compositional inhomogeneity. Phys. Solid State 54, 493–498 (2012). https://doi.org/10.1134/S1063783412030201

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