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A comparative analysis of the mechanisms of pinning of a domain wall in a nanowire

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Abstract

A comparative analysis of the influence of random fluctuations of the crystallographic anisotropy and surface roughnesses on the pinning of a domain wall in a nanowire has been performed in the framework of the model of a polycrystalline nanowire. The initial magnetization curve and the coercive force for these mechanisms of pinning have been calculated. A criterion has been formulated according to which surface inhomogeneities of the nanowire play the key role in the process of pinning of a domain wall. The analytical results obtained have been verified using computer simulation.

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Authors and Affiliations

  1. Siberian Federal University, pr. Svobodnyi 79, Krasnoyarsk, 660041, Russia

    A. A. Ivanov

  2. Astaf’ev Krasnoyarsk State Pedagogical University, ul. Ady Lebedevoi 89, Krasnoyarsk, 660049, Russia

    V. A. Orlov

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  1. A. A. Ivanov
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  2. V. A. Orlov
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Correspondence to V. A. Orlov.

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Original Russian Text © A.A. Ivanov, V.A. Orlov, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 12, pp. 2318–2326.

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Ivanov, A.A., Orlov, V.A. A comparative analysis of the mechanisms of pinning of a domain wall in a nanowire. Phys. Solid State 53, 2441–2449 (2011). https://doi.org/10.1134/S1063783411120079

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  • DOI: https://doi.org/10.1134/S1063783411120079

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