Skip to main content
SpringerLink
Log in

Memory effects in field-effect transistor structures based on composite films of polyepoxypropylcarbazole with gold nanoparticles

  • Polymers
  • Published:
Physics of the Solid State Aims and scope Submit manuscript

Abstract

The memory effects in field-effect transistor structures with an active layer based on composite films of a semiconductor polymer, i.e., the carbazole derivative and gold nanoparticles, manifesting themselves in the hysteresis of the transient characteristics of the transistor have been studied. It has been shown that the observed effects are associated with the features of transport in the polymer-gold nanoparticle structure, where the gold particles serve as a medium of charge carrier collection (accumulation). The data writeerase mechanism based on conductivity modulation of the working channel of the field-effect transistor by the gate voltage have been discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T. A. Skotheim and J. R. Reynolds, Handbook of Conducting Polymers, 3rd ed. (CRC Press, New York, 2007), Vols. 1–2, p. 1949.

    Google Scholar 

  2. Y. Yang, J. Ouyang, L. Ma, R. J. Tseng, and C. W. Chu, Adv. Func. Mater. 16, 1001 (2006).

    Article  Google Scholar 

  3. J. Campbell Scott and L. D. Bozano, Adv. Mater. (Weinheim) 19, 1452 (2007).

    Article  Google Scholar 

  4. A. N. Aleshin and E. L. Alexandrova, Phys. Solid State 50(10), 1978 (2008).

    Article  ADS  Google Scholar 

  5. E. A. Lebedev, E. L. Alexandrova and A. N. Aleshin, Phys. Solid State 51(1), 208 (2009).

    Article  ADS  Google Scholar 

  6. E. L. Alexandrova, E. A. Lebedev, N. N. Konstantinova, and A. N. Aleshin, Phys. Solid State 52(2), 422 (2010).

    Article  ADS  Google Scholar 

  7. W. Wu, H. Zhang, Y. Wang, S. Ye, Y. Guo, C. Di, G. Yu, D. Zhu, and Y. Liu, Adv. Func. Mater. 18, 2593 (2008).

    Article  Google Scholar 

  8. W. L. Leong, N. Mathews, B. Tan, S. Vaidyanathan, F. Dotz, and S. Mhaisalkar, J. Mater. Chem. 21, 5203 (2011).

    Article  Google Scholar 

  9. C. November, D. Guerin, K. Lmimouni, C. Gamrat, and D. Vuillaume, Appl. Phys. Lett. 92, 103314 (2008).

    Article  ADS  Google Scholar 

  10. L. Zhen, W. Guan, L. Shang, M. Liu, and G. Liu, J. Phys. D: Appl. Phys. 41, 135111 (2008).

    Article  ADS  Google Scholar 

  11. M. F. Mabrook, Y. Yun, C. Pearson, D. A. Zeze, and M. C. Petty, Appl. Phys. Lett. 94, 173302 (2009).

    Article  ADS  Google Scholar 

  12. A. N. Aleshin and I. P. Shcherbakov, J. Phys. D: Appl. Phys. 43, 315104 (2010).

    Article  ADS  Google Scholar 

  13. A. N. Aleshin, E. L. Alexandrova, and I. P. Shcherbakov, Eur. Phys. J.: Appl. Phys. 51, 33202 (2010).

    Article  ADS  Google Scholar 

  14. J. Horowitz, Adv. Mater. (Weinheim) 10, 365 (1998).

    Article  Google Scholar 

  15. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim) 14, 99 (2002).

    Article  Google Scholar 

  16. W. L. Leong, P. S. Lee, S. G. Mhaisalkar, T. P. Chen, and A. Dodabalapur, Appl. Phys. Lett. 90, 042906 (2007).

    Article  ADS  Google Scholar 

  17. S. M. Sze, Semiconductor Devices: Physics and Technology (Wiley, New York, 1985), p. 568.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. N. Aleshin, F. S. Fedichkin & P. E. Gusakov

Authors
  1. A. N. Aleshin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. F. S. Fedichkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. P. E. Gusakov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. N. Aleshin.

Additional information

Original Russian Text © A.N. Aleshin, F.S. Fedichkin, P.E. Gusakov, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 11, pp. 2251–2255.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Aleshin, A.N., Fedichkin, F.S. & Gusakov, P.E. Memory effects in field-effect transistor structures based on composite films of polyepoxypropylcarbazole with gold nanoparticles. Phys. Solid State 53, 2370–2374 (2011). https://doi.org/10.1134/S1063783411110023

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063783411110023

Keywords

Search

Navigation