Abstract
Luminescence and scintillation properties of Y3Al5O12:Ce single crystals grown from the melt by the Czochralski and horizontal directed crystallization methods in various gas media and Y3Al5O12:Ce single-crystal films grown by liquid-phase epitaxy from a melt solution based on a PbO-B2O3 flux have been comparatively analyzed. The strong dependence of scintillation properties of Y3Al5O12:Ce single crystals on their growth conditions and concentrations of YAl antisite defects and vacancy defects has been established. Vacancy defects are involved in Ce3+ ion emission excitation as the centers of intrinsic UV luminescence and trapping centers. It has been shown that Y3Al5O12:Ce single-crystal films are characterized by faster scintillation decay kinetics than single crystals and a lower content of slow components in Ce3+ ion luminescence decay during high-energy excitation due to the absence of YAl antisite defects in them and low concentration of vacancy defects. At the same time, the light yield of Y3Al5O12:Ce single-crystal films is comparable to that of single crystals grown by directed crystallization due to the quenching effect of the Pb2+ ion impurity as a flux component and is slightly lower (∼25%) than the light yield of single crystals grown by the Czochralski method.
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Original Russian Text © Yu.V. Zorenko, V.P. Savchin, V.I. Gorbenko, T.I. Voznyak, T.E. Zorenko, V.M. Puzikov, A.Ya. Dan’ko, S.V. Nizhankovskii, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 8, pp. 1542–1547.
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Zorenko, Y.V., Savchin, V.P., Gorbenko, V.I. et al. Luminescence and scintillation properties of Y3Al5O12:Ce single crystals and single-crystal films. Phys. Solid State 53, 1620–1625 (2011). https://doi.org/10.1134/S1063783411080348
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DOI: https://doi.org/10.1134/S1063783411080348