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Specific features of the dislocation structure of layered titanium dichalcogenides TiX 2 (X = S, Se, or Te)

  • Mechanical Properties, Physics of Strength, and Plasticity
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Abstract

The dislocation structure of titanium dichalcogenide single crystals has been investigated. It has been established that the basis of the structure consists of dislocations that lie in the basal plane, are predominantly edge dislocations, and are responsible for the strain behavior of the material. There are also growth dislocations that are predominantly screw dislocations and form dislocation networks. A relationship is revealed between the nature of the chalcogen and the character of the defect structure.

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Authors and Affiliations

  1. Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. Sof’i Kovalevskoi 18, Yekaterinburg, 620990, Russia

    E. G. Galieva, O. V. Antonova, P. E. Panfilov & A. N. Titov

Authors
  1. E. G. Galieva
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  2. O. V. Antonova
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  3. P. E. Panfilov
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  4. A. N. Titov
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Correspondence to A. N. Titov.

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Original Russian Text © E.G. Galieva, O.V. Antonova, P.E. Panfilov, A.N. Titov, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 5, pp. 984–992.

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Galieva, E.G., Antonova, O.V., Panfilov, P.E. et al. Specific features of the dislocation structure of layered titanium dichalcogenides TiX 2 (X = S, Se, or Te). Phys. Solid State 53, 1047–1055 (2011). https://doi.org/10.1134/S1063783411050106

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  • DOI: https://doi.org/10.1134/S1063783411050106

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