Skip to main content
SpringerLink
Log in

Long-term relaxation of the current in a naturally disordered Pb3O4 semiconductor

  • Semiconductors
  • Published:
Physics of the Solid State Aims and scope Submit manuscript

Abstract

Charge transfer has been studied in metal-dielectric-metal structures based on polycrystalline layers of lead orthoplumbate Pb3O4 with a binder—cyanoethyl ester of polyvinyl alcohol, deposited on a glass substrate with a conducting ITO film. Time dependences of the current have been investigated in the temperature range T = 300–370 K and in the range of dc electric field strengths E = 2 × 105−9 × 105 V/m. Flowing of the relaxation polarization current leads to charge accumulation in the near-electrode region. Experimental dependences agree with the relay race mechanism of charge transfer with the participation of deep local levels. Microparameters of charge transfer are determined upon varying the experimental conditions.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. V. T. Avanesyan and V. A. Bordovskii, J. Non-Cryst. Solids 351, 2849 (2005).

    Article  ADS  Google Scholar 

  2. V. T. Avanesyan, V. A. Bordovskii, and S. A. Potachev, J. Non-Cryst. Solids 305, 136 (2002).

    Article  ADS  Google Scholar 

  3. V. G. Orlov, S. A. Bush, S. A. Ivanov, and V. V. Zhurov, Fiz. Tverd. Tela (St. Petersburg) 39(5), 865 (1997) [Phys. Solid State 39 (5), 770 (1997)].

    Google Scholar 

  4. R. E. Dinnebier, S. Carlson, M. Hanfland, and M. Jansen, Am. Mineral. 88, 996 (2003).

    Google Scholar 

  5. G. A. Bordovskii and V. A. Izvozchikov, Naturally Disordered Semiconductor Crystals (Obrazovanie, St. Petersburg, 1997) [in Russian].

    Google Scholar 

  6. V. A. Izvozchikov and O. A. Timofeev, Photoconductive Lead Oxides in Electronics (Energiya, Leningrad, 1979) [in Russian].

    Google Scholar 

  7. A. K. Jonsher, Universal Relaxation Law (Chelsea Dielectrics, London, 1996).

    Google Scholar 

  8. S. N. Mustafaeva and A. I. Gasanov, Fiz. Tverd. Tela (St. Petersburg) 46(11), 1937 (2004) [Phys. Solid State 46 (11), 2002 (2004)].

    Google Scholar 

  9. B. L. Timan, Fiz. Tekh. Poluprovodn. (Leningrad) 7(2), 225 (1973) [Sov. Phys. Semicond. 7 (2), 163 (1973)].

    Google Scholar 

  10. B. L. Timan, Fiz. Tekh. Poluprovodn. (Leningrad) 7(2), 230 (1973) [Sov. Phys. Semicond. 7 (2), 167 (1973)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Herzen State Pedagogical University of Russia, nab. Reki Moiki 48, St. Petersburg, 191186, Russia

    V. T. Avanesyan & M. P. Sevryugina

Authors
  1. V. T. Avanesyan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. P. Sevryugina
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. T. Avanesyan.

Additional information

Original Russian Text © V.T. Avanesyan, M.P. Sevryugina, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 5, pp. 881–884.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Avanesyan, V.T., Sevryugina, M.P. Long-term relaxation of the current in a naturally disordered Pb3O4 semiconductor. Phys. Solid State 53, 939–942 (2011). https://doi.org/10.1134/S1063783411050040

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063783411050040

Keywords

Search

Navigation