Abstract
The temperature dependences of the electrical conductivity and the permittivity of TlInSe2 and TlGaTe2 crystals unirradiated and irradiated with 4-MeV electrons at a doze of 1016 cm−2 have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity σ and the permittivity ɛ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe2 and TlGaTe2 single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences σ = f(T) and ɛ = f(T). Electron irradiation at a doze of 1016 cm−2 does not affect the phase transition temperatures of the crystals under investigation.
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Original Russian Text © A.U. Sheleg, V.G. Hurtavy, S.N. Mustafaeva, E.M. Kerimova, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 3, pp. 443–445.
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Sheleg, A.U., Hurtavy, V.G., Mustafaeva, S.N. et al. Effect of ionizing radiation on the dielectric characteristics of TlInSe2 and TlGaTe2 single crystals. Phys. Solid State 53, 472–475 (2011). https://doi.org/10.1134/S1063783411030279
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DOI: https://doi.org/10.1134/S1063783411030279