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Impedance of Si/SiO2 composites in the vicinity of the percolation threshold

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Abstract

The Si/SiO2 composites, in which the concentration of the conducting silicon phase is close to the percolation threshold, have been prepared using the ceramic technology and studied at an alternating current. It has been found that an increase in the potential difference in a direct-current electric field leads to a decrease in the dispersion of time constants of dielectric spacers in the “Si grain-SiO2 spacer-Si grain” structures forming a conducting cluster in the composite.

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Authors and Affiliations

  1. Belarusian State University, pr. Nezavisimosti 4, Minsk, 220080, Belarus

    N. A. Poklonski & N. I. Gorbachuk

  2. College of Staten Island, The City University of New York (CUNY), 2800 Victory Boulevard, Staten Island, New York, 10314, USA

    D. Aleinikova

Authors
  1. N. A. Poklonski
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  2. N. I. Gorbachuk
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  3. D. Aleinikova
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Correspondence to N. A. Poklonski.

Additional information

Original Russian Text © N.A. Poklonski, N.I. Gorbachuk, D. Aleinikova, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 3, pp. 433–437.

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Poklonski, N.A., Gorbachuk, N.I. & Aleinikova, D. Impedance of Si/SiO2 composites in the vicinity of the percolation threshold. Phys. Solid State 53, 462–466 (2011). https://doi.org/10.1134/S1063783411030231

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  • DOI: https://doi.org/10.1134/S1063783411030231

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