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Intrinsic ferromagnetism created by vacancy injection in a semiconductor oxide Ti1 − x Co x O2 − δ

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Abstract

The possibility of creating room-temperature intrinsic ferromagnetism in a highly doped oxide semiconductor has been investigated. The results indicate that such state of a ferromagnetic semiconductor can be achieved by magnetron sputtering deposition of a semiconductor oxide doped with a transition metal followed by low-temperature vacuum annealing.

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Authors and Affiliations

  1. Federal State Research and Design Institute of Rare-Metal Industry “Giredmet,”, Bol’shoi Tolmachevskii per. 5/1, Moscow, 119017, Russia

    A. F. Orlov, L. A. Balagurov & I. V. Kulemanov

  2. Moscow State University, Moscow, 119991, Russia

    N. S. Perov, E. A. Gan’shina & L. Yu. Fetisov

  3. European Synchrotron Radiation Facility, 6 rue Jules Horowitz, BP 220, Grenoble Cedex 9, 38043, France

    A. Rogalev, A. Smekhova & J. C. Cezar

Authors
  1. A. F. Orlov
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  2. L. A. Balagurov
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  3. I. V. Kulemanov
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  4. N. S. Perov
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  5. E. A. Gan’shina
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  6. L. Yu. Fetisov
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  7. A. Rogalev
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  8. A. Smekhova
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  9. J. C. Cezar
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Corresponding author

Correspondence to A. F. Orlov.

Additional information

Original Russian Text © A.F. Orlov, L.A. Balagurov, I.V. Kulemanov, N.S. Perov, E.A. Gan’shina, L.Yu. Fetisov, A. Rogalev, A. Smekhova, J.C. Cezar, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 3, pp. 452–454.

The article was translated by the authors.

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Orlov, A.F., Balagurov, L.A., Kulemanov, I.V. et al. Intrinsic ferromagnetism created by vacancy injection in a semiconductor oxide Ti1 − x Co x O2 − δ . Phys. Solid State 53, 482–484 (2011). https://doi.org/10.1134/S106378341103022X

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  • DOI: https://doi.org/10.1134/S106378341103022X

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