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Investigation of the temperature dependences of the electrical resistance of SmS single crystals at different pressures

  • Semiconductors and Dielectrics
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Abstract

The pressure-induced shift of impurity levels under hydrostatic pressure at T = 300 K (−9.6 meV/MPa) has been obtained from measurements of the temperature dependences of the electrical resistance of SmS single crystals at different pressures. The obtained value confirms the validity of the existing model of the semiconductor-metal phase transition in samarium monosulfide.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    V. V. Kaminskiĭ, N. N. Stepanov & A. A. Molodykh

Authors
  1. V. V. Kaminskiĭ
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  2. N. N. Stepanov
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  3. A. A. Molodykh
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Correspondence to V. V. Kaminskiĭ.

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Original Russian Text © V.V. Kaminskiĭ, N.N. Stepanov, A.A. Molodykh, 2010, published in Fizika Tverdogo Tela, 2010, Vol. 52, No. 7, pp. 1269–1270.

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Kaminskiĭ, V.V., Stepanov, N.N. & Molodykh, A.A. Investigation of the temperature dependences of the electrical resistance of SmS single crystals at different pressures. Phys. Solid State 52, 1356–1358 (2010). https://doi.org/10.1134/S106378341007005X

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  • DOI: https://doi.org/10.1134/S106378341007005X

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