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Kinetic properties of p-Mg2Si x Sn1 − x solid solutions for x < 0.4

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Abstract

The results of a study of Mg2Si x Sn1 − x solid solutions (x = 0.25, 0.3, 0.35, 0.4) are reported. The measurements performed cover the Seebeck coefficient, electrical conductivity and the Hall coefficient over broad ranges of temperatures (80–700 K) and carrier concentrations (1018 to 6 × 1020 cm−3). These measurements were used to derive the band structure parameters (band gap, hole mobility, hole effective mass). The effective mass of holes was found to grow strongly with an increase in their concentration.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    G. N. Isachenko, V. K. Zaĭtsev, M. I. Fedorov, A. T. Burkov, E. A. Gurieva, P. P. Konstantinov & M. V. Vedernikov

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  1. G. N. Isachenko
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  2. V. K. Zaĭtsev
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  3. M. I. Fedorov
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  4. A. T. Burkov
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  5. E. A. Gurieva
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  6. P. P. Konstantinov
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  7. M. V. Vedernikov
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Correspondence to M. I. Fedorov.

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Original Russian Text © G.N. Isachenko, V.K. Zaĭtsev, M. I. Fedorov, A.T. Burkov, E.A. Gurieva, P.P. Konstantinov, M.V. Vedernikov, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 9, pp. 1693–1696.

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Isachenko, G.N., Zaĭtsev, V.K., Fedorov, M.I. et al. Kinetic properties of p-Mg2Si x Sn1 − x solid solutions for x < 0.4. Phys. Solid State 51, 1796–1799 (2009). https://doi.org/10.1134/S1063783409090066

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  • DOI: https://doi.org/10.1134/S1063783409090066

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