Abstract
The dielectric parameters (permittivity ɛ and dielectric loss tangent tanδ) for As2Se3〈Bi〉 x layers are calculated using the polarization current relaxation curves measured at different strengths of the applied electric field. It is revealed that the bismuth dopant has a considerable effect on the frequency dependences of ɛ and tanδ, which is probably associated with the existence of microinhomogeneous regions with an increased dopant concentration.
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Original Russian Text © R.A. Castro, N.I. Anisimova, V.A. Bordovskiĭ, G.I. Grabko, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 6, pp. 1062–1064.
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Castro, R.A., Anisimova, N.I., Bordovskiĭ, V.A. et al. Dielectric properties of modified As2Se3〈Bi〉 x layers. Phys. Solid State 51, 1121–1123 (2009). https://doi.org/10.1134/S1063783409060055
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DOI: https://doi.org/10.1134/S1063783409060055