Abstract
The spin orientation dynamics in a GaAs quantum well with a laterally nonuniform electric potential generated by a mosaic electrode deposited on the surface of the sample has been investigated using the photoinduced magneto-optical Kerr effect. It has been found that the application of a negative potential higher than 1 V to the electrode leads to more than a hundredfold increase in the spin polarization lifetime in the sample under study. It is concluded that so strong slowing down of the relaxation is caused by a combined action of two effects, namely, the spatial separation of electron and hole, which reduces the radiative recombination rate of electron-hole pair, and the localization of electron, which is accompanied by the suppression of spin relaxation processes caused by electron motion.
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Original Russian Text © R.V. Cherbunin, M.S. Kuznetsova, I.Ya. Gerlovin, I.V. Ignatiev, Yu.K. Dolgikh, Yu.P. Efimov, S.A. Eliseev, V.V. Petrov, S.V. Poltavtsev, A.V. Larionov, A.I. Il’in, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 4, pp. 791–794.
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Cherbunin, R.V., Kuznetsova, M.S., Gerlovin, I.Y. et al. Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential. Phys. Solid State 51, 837–840 (2009). https://doi.org/10.1134/S1063783409040349
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DOI: https://doi.org/10.1134/S1063783409040349