Abstract
The possibility of forming nanocarbon films on the SiC surface with the use of the technology employed in sublimation epitaxy of silicon carbide has been demonstrated. The temperature range in which nanocarbon films four to five lattice-cells thick form is found. The presence in films of two-dimensional graphite crystals is revealed.
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Original Russian Text © A.A. Lebedev, I.S. Kotousova, A.A. Lavrent’ev, S.P. Lebedev, I.V. Makarenko, V.N. Petrov, A.N. Titkov, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 4, pp. 783–786.
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Lebedev, A.A., Kotousova, I.S., Lavrent’ev, A.A. et al. Formation of nanocarbon films on the SiC surface through sublimation in vacuum. Phys. Solid State 51, 829–832 (2009). https://doi.org/10.1134/S1063783409040325
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DOI: https://doi.org/10.1134/S1063783409040325