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Spin-orbit mixing in III–V semiconductors at the Γ point

  • Semiconductors and Dielectrics
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Abstract

The consequences of the theory of spin-orbit mixing in III–V semiconductors at the Γ point have been analyzed within the five-band model for the first time. A formula that describes the optical matrix element relating the Γ7 and Γ8 bands and expresses it through the known Luttinger parameter q is derived. Until recently, it was believed that this optical matrix element is equal to zero and that the corresponding transition is forbidden. The role of this transition in the experiment on photon absorption by free holes in the p-GaSb compound is discussed.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    V. D. Dymnikov & O. V. Konstantinov

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  1. V. D. Dymnikov
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  2. O. V. Konstantinov
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Correspondence to V. D. Dymnikov.

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Original Russian Text © V.D. Dymnikov, O.V. Konstantinov, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 4, pp. 654–660.

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Dymnikov, V.D., Konstantinov, O.V. Spin-orbit mixing in III–V semiconductors at the Γ point. Phys. Solid State 51, 690–697 (2009). https://doi.org/10.1134/S1063783409040064

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  • DOI: https://doi.org/10.1134/S1063783409040064

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