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Electron scattering with spin flip in indium antimonide and indium arsenide

  • Semiconductors and Dielectrics
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Abstract

The longitudinal magnetoresistance has been investigated at temperatures in the range from 2.8 to 200 K in a magnetic field of up to 200 kOe with the aim of determining the temperature range and the magnetic field strength at which charge carrier scattering with spin flip occurs in n-type indium arsenide and n-type indium antimonide. It is established that quantum oscillations of the longitudinal magnetoresistance of indium arsenide exhibit weak zero maxima due to electron scattering with spin flip at temperatures in the range from 4 to 35 K in a magnetic field of 146 kOe. For the longitudinal magnetoresistance of indium antimonide, zero maxima caused by electron scattering with spin flip are revealed in the temperature range from 60 to 80 K in a magnetic field of 132 kOe.

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Authors and Affiliations

  1. Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. Yaragskogo 94, Makhachkala, 367003, Dagestan, Russia

    R. I. Bashirov, M. M. Gadzhialiev & Z. Sh. Pirmagomedov

Authors
  1. R. I. Bashirov
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  2. M. M. Gadzhialiev
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  3. Z. Sh. Pirmagomedov
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Correspondence to M. M. Gadzhialiev.

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Original Russian Text © R.I. Bashirov, M.M. Gadzhialiev, Z.Sh. Pirmagomedov, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 4, pp. 643–645.

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Bashirov, R.I., Gadzhialiev, M.M. & Pirmagomedov, Z.S. Electron scattering with spin flip in indium antimonide and indium arsenide. Phys. Solid State 51, 678–680 (2009). https://doi.org/10.1134/S1063783409040040

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  • DOI: https://doi.org/10.1134/S1063783409040040

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