Abstract
This paper reports on the formation of a 2D electronic channel, i.e., a charge accumulation layer on the n-InGaN(0001) surface observed under adsorption of submonolayer Cs coatings. It is found that photoemission from the accumulation layer is excited by light in the InGaN transparency region. It is established that the potential well depth and the density of electronic states in the accumulation layer can be controlled by properly varying the Cs coverage. It is shown that the accumulation layer exhibits quantum-well effects. The photoemission matrix element is calculated, and the energy parameters of the accumulation layer are obtained. An oscillatory structure originating from the Fabry-Perot interference is revealed in the spectra of photoemission from the accumulation layer.
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M. G. Betti, R. Biagi, U. del Pennino, N. Mariani, and M. Pedio, Phys. Rev. B: Condens. Matter 53, 13605 (1996).
L. Ö. Olsson, C. B. M. Andersson, M. C. Hakansson, J. Kanski, L. Ilver, and U. O. Karlsson, Phys. Rev. Lett. 76, 3626 (1996).
V. Yu. Aristov, G. Le Lay, V. M. Zhilin, G. Indlekofer, C. Grupp, A. Taleb-Inrahimi, and P. Soukiassian, Phys. Rev. B: Condens. Matter 60, 7752 (1999).
M. G. Betti, V. Corradini, G. Bertoni, P. Casarini, C. Mariani, and A. Abramo, Phys. Rev. B: Condens. Matter 63, 155315 (2001).
G. R. Bell, T. S. Jones, and C. F. McConville, Appl. Phys. Lett. 71, 3688 (1997).
I. Mahboob, T. D. Veal, L. F. J. Piper, and C. F. McConville, Phys. Rev. B: Condens. Matter 69, 201307 (2004).
T. D. Veal, P. H. Jefferson, L. F. J. Piper, C. F. McConville, T. B. Joyce, and P. R. Chalker, Appl. Phys. Lett. 89, 202110 (2006).
G. V. Benemanskaya, V. S. Vikhnin, N. M. Shmidt, G. E. Frank-Kamenetskaya, and I. V. Afanasiev, Appl. Phys. Lett. 85, 1365 (2004).
G. V. Benemanskaya, G. E. Frank-Kamenetskaya, N. M. Shmidt, and M. S. Dunaevskioe, Zh. Éksp. Teor. Fiz. 130(3), 506 (2006) [JETP 103 (3), 441 (2006)].
G. V. Benemanskaya, M. N. Lapushkin, and S. N. Timoshnev, Fiz. Tverd. Tela (St. Petersburg) 49(4), 613 (2007) [Phys. Solid State 49 (4), 646 (2007)].
G. V. Benemanskaya, S. V. Ivanov, and M. N. Lapushkin, Solid State Commun. 143, 476 (2007).
S. V. Ivanov, V. N. Jmerik, T. V. Shubina, S. B. Listoshin, A. M. Mizerov, A. A. Sitnikova, Min-Ho Kim, Masayoshi Koike, Bum-Joon Kim, and P. S. Kop’ev, J. Cryst. Growth 301, 465 (2007).
V. N. Jmerik, A. M. Mizerov, A. M. Shubina, D. S. Plotnikov, M. V. Zamoryanskaya, M. A. Yagovkina, Ya. V. Domracheva, A. A. Sitnikova, and S. V. Ivanov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 42(5), 630 (2008) [Semiconductors 42 (5), 616 (2008)].
V.-H. Kim, S.-N. Lee, and Ch. Huh, Phys. Rev. B: Condens. Matter 61, 10966 (1999).
G. V. Benemanskaya, M. N. Lapushkin, and M. I. Urbakh, Zh. Éksp. Teor. Fiz. 102(5), 1664 (1992) [Sov. Phys. JETP 75 (5), 899 (1992)].
A. Liebsch, G. V. Benemanskaya, and M. N. Lapushkin, Surf. Sci. 302, 303 (1994).
I. V. Afanas’ev, G. V. Benemanskaya, G. É. Frank-Kamenetskaya, V. S. Vikhnin, and N. M. Shmidt, RF Patent No. 2249877 (2005).
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Original Russian Text © G.V. Benemanskaya, V.N. Zhmerik, M.N. Lapushkin, and S.N. Timoshnev, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 2, pp. 372–376.
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Benemanskaya, G.V., Zhmerik, V.N., Lapushkin, M.N. et al. Charge accumulation nanolayer: A 2D electronic channel in Cs/n-InGaN ultrathin interfaces. Phys. Solid State 51, 395–399 (2009). https://doi.org/10.1134/S1063783409020310
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DOI: https://doi.org/10.1134/S1063783409020310