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Location of the energy levels of the rare-earth ions in BaF2 and CdF2

  • Proceedings of the XIII Feofilov Symposium “Spectroscopy of Crystals Doped by Rare-Earth and Transition-Metal Ions” (Irkutsk, July 9–13, 2007)
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Abstract

The location of the energy levels of rare-earth (RE) elements in the energy band diagram of BaF2 and CdF2 crystals is determined. The role of RE 3+ and RE 2+ ions in the capture of charge carriers, luminescence, and the formation of radiation defects is evaluated. It is shown that the substantial difference in the luminescence properties of BaF2: RE and CdF2: RE is associated with the location of the excited energy levels in the band diagram of the crystals.

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Authors and Affiliations

  1. St. Petersburg State Polytechnical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia

    P. A. Rodnyĭ & I. V. Khodyuk

  2. Ivan Franko National University of Lviv, Universitetskaya ul 1, Lviv, 79000, Ukraine

    G. B. Stryganyuk

Authors
  1. P. A. Rodnyĭ
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  2. I. V. Khodyuk
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  3. G. B. Stryganyuk
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Correspondence to I. V. Khodyuk.

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Original Russian Text © P.A. Rodnyĭ, I.V. Khodyuk, G.B. Stryganyuk, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 9, pp. 1578–1581.

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Rodnyĭ, P.A., Khodyuk, I.V. & Stryganyuk, G.B. Location of the energy levels of the rare-earth ions in BaF2 and CdF2 . Phys. Solid State 50, 1639–1643 (2008). https://doi.org/10.1134/S1063783408090072

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  • DOI: https://doi.org/10.1134/S1063783408090072

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