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Development of dislocation-free ion-doped silicon layers

  • Defects and Impurity Centers, Dislocations, and Physics of Strength
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Abstract

Possible suppression of the formation of residual extended defects in boron-implanted silicon is studied using a method that combines the effects of a threshold dose and annihilation of point defects on substitutional impurities. Implantation conditions are determined under which dislocation-free ion-doped silicon layers are formed.

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Authors and Affiliations

  1. Integral Research-and-Production Corporation, Minsk, 220108, Belarus

    V. I. Plebanovich & A. I. Belous

  2. Belarussian State University, pr. F. Skoriny 4, Minsk, 220050, Belarus

    A. R. Chelyadinskiĭ & V. B. Odzhaev

Authors
  1. V. I. Plebanovich
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  2. A. I. Belous
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  3. A. R. Chelyadinskiĭ
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  4. V. B. Odzhaev
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Corresponding author

Correspondence to A. R. Chelyadinskiĭ.

Additional information

Original Russian Text © V.I. Plebanovich, A.I. Belous, A.R. Chelyadinskiĭ, V.B. Odzhaev, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 8, pp. 1378–1382.

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Plebanovich, V.I., Belous, A.I., Chelyadinskiĭ, A.R. et al. Development of dislocation-free ion-doped silicon layers. Phys. Solid State 50, 1433–1437 (2008). https://doi.org/10.1134/S1063783408080088

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  • DOI: https://doi.org/10.1134/S1063783408080088

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