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Size and concentration distributions of x-ray scattering centers in annealed Cz-Si

  • Defects and Impurity Centers, Dislocations, and Physics pf Strength
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Abstract

The kinetics of decomposition of a solid solution of oxygen in Czochralski-grown silicon (Cz-Si) is investigated using x-ray diffractometry. The samples are annealed for different times at a temperature of 900°C. A technique for processing x-ray diffraction data is proposed. Portions of the size and concentration distribution curves for oxygen-containing precipitates and dislocation loops are obtained.

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Authors and Affiliations

  1. Taras Shevchenko National University of Kiev, Vladimirskaya ul. 64, Kiev, 01033, Ukraine

    N. N. Novikov, P. A. Tesel’ko & O. V. Mikhalyuk

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  1. N. N. Novikov
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  2. P. A. Tesel’ko
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  3. O. V. Mikhalyuk
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Correspondence to P. A. Tesel’ko.

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Original Russian Text © N.N. Novikov, P.A. Tesel’ko, O.V. Mikhalyuk, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 7, pp. 1196–1199.

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Novikov, N.N., Tesel’ko, P.A. & Mikhalyuk, O.V. Size and concentration distributions of x-ray scattering centers in annealed Cz-Si. Phys. Solid State 50, 1246–1249 (2008). https://doi.org/10.1134/S1063783408070093

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  • DOI: https://doi.org/10.1134/S1063783408070093

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