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Dielectric relaxation in TGS crystals doped with orthophosphoric and phosphorous acids

  • Magnetism and Ferroelectricity
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Abstract

Polarization switching and temperature dependences of the complex permittivity of triglycine sulfate crystals doped with orthophosphoric and phosphorous acids are studied in the frequency range 100 Hz-1 MHz at temperatures of 140–340 K. It is found that, for a comparatively low solubility of the dopants (not over 1 mol %), doping of the crystals gives rise to a noticeable change in the parameters of the dielectric hysteresis loop, as well as in the magnitude and character of the temperature dependence of dielectric losses, thus implying an increase in the ferroelectric phase of the doped crystals of the activation energies and relaxation times of domain walls as a result of their interaction with the dopants.

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Correspondence to V. V. Lemanov.

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Original Russian Text © V.K. Yarmarkin, S.G. Shul’man, G.A. Pankova, N.V. Zaĭtseva, V.V. Lemanov, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 5, pp. 897–900.

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Yarmarkin, V.K., Shul’man, S.G., Pankova, G.A. et al. Dielectric relaxation in TGS crystals doped with orthophosphoric and phosphorous acids. Phys. Solid State 50, 937–940 (2008). https://doi.org/10.1134/S1063783408050211

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  • DOI: https://doi.org/10.1134/S1063783408050211

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