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Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy

  • Semiconductors and Dielectrics
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Abstract

The crystal structure of GaAs nanowhiskers grown by molecular-beam epitaxy on Si(111) and Si(100) substrates is investigated using reflection high-energy electron diffraction (RHEED). It is revealed that, in both cases, the electron diffraction images contain a combination (superposition) of systems of reflections characteristic of the hexagonal (wurtzite and/or 4H polytype) and cubic (sphalerite) phases of the GaAs compound. The growth on the Si(111) substrates leads to the formation of nanowhiskers with hexagonal (wurtzite and/or 4H polytype) and cubic (sphalerite) structures with one and two orientations, respectively. In the case of the Si(100) substrates, the grown array contains GaAs nanowhiskers that have a cubic structure with five different orientations and a hexagonal structure with eight orientations in the (110) planes of the substrate. The formation of the two-phase crystal structure in nanowhiskers is explained by the wurtzite—sphalerite phase transitions and/or twinning of crystallites.

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Authors and Affiliations

  1. St. Petersburg Physical Technological Center for Research and Education, Russian Academy of Sciences, ul. Khlopina 8/3, St. Petersburg, 195220, Russia

    I. P. Soshnikov, G. É. Cirlin, V. N. Nevedomskiĭ, Yu. B. Samsonenko & V. M. Ustinov

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    I. P. Soshnikov, G. É. Cirlin, A. A. Tonkikh, Yu. B. Samsonenko & V. M. Ustinov

  3. Institute for Analytical Instrumentation, Russian Academy of Sciences, Rizhskiĭ pr. 26, St. Petersburg, 190103, Russia

    G. É. Cirlin, A. A. Tonkikh & Yu. B. Samsonenko

Authors
  1. I. P. Soshnikov
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  2. G. É. Cirlin
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  3. A. A. Tonkikh
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  4. V. N. Nevedomskiĭ
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  5. Yu. B. Samsonenko
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  6. V. M. Ustinov
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Original Russian Text © I.P.Soshnikov, G.É. Cirlin, A.A. Tonkikh, V.N. Nevedomskiĭ, Yu.B. Samsonenko, V.M. Ustinov, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 8, pp. 1373–1377.

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Soshnikov, I.P., Cirlin, G.É., Tonkikh, A.A. et al. Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy. Phys. Solid State 49, 1440–1445 (2007). https://doi.org/10.1134/S1063783407080069

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  • DOI: https://doi.org/10.1134/S1063783407080069

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