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On the calculation of the linear and quadratic dielectric susceptibilities of hexagonal silicon carbide

  • Semiconductors and Dielectrics
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Abstract

The electron and lattice contributions to the linear and quadratic dielectric susceptibilities of the hexagonal polytype of silicon carbide 2H-SiC are calculated within the Harrison bond-orbital model. The results obtained are in satisfactory agreement with the calculations performed by other authors and are close in order of magnitude to the corresponding values for the 6H-SiC polytype.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    S. Yu. Davydov

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  1. S. Yu. Davydov
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Original Russian Text © S. Yu. Davydov, 2006, published in Fizika Tverdogo Tela. 2006, Vol. 48, No. 10, pp. 1748–1750.

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Davydov, S.Y. On the calculation of the linear and quadratic dielectric susceptibilities of hexagonal silicon carbide. Phys. Solid State 48, 1853–1855 (2006). https://doi.org/10.1134/S1063783406100040

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  • DOI: https://doi.org/10.1134/S1063783406100040

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