Abstract
A technique for preparing γ-Nd2S3 crystalline thin films through discrete vacuum thermal evaporation of a presynthesized bulk material is developed. The films deposited are doped with cadmium and lead. The reflectance and transmittance spectra of the films are measured in the photon energy range 0.2–3.0 eV at a temperature of 300 K. The frequency analysis of the absorption coefficient demonstrates that the γ-Nd2S3 films are characterized by an exponential absorption edge. The photoconductivity spectra and temperature dependences of the photoconductivity for the γ-Nd2S3 films doped with cadmium and lead are measured in the photon energy range 0.2–3.3 eV at temperatures varying from 115 to 380 K. The experimental data obtained are interpreted under the assumption that the acceptor levels formed by vacancies in the cation sublattice and compensated for by cadmium and lead donor dopants play a crucial role in the photoconduction. The ionization energy at the lead donor level is determined.
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Original Russian Text © Z.U. Dzhabua, T.O. Dadiani, A.V. Gigineishvili, M.Yu. Stamateli, K.D. Davitadze, G.N. Iluridze, 2006, published in Fizika Tverdogo Tela, 2006, Vol. 48, No. 8, pp. 1397–1401.
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Dzhabua, Z.U., Dadiani, T.O., Gigineishvili, A.V. et al. Optical and photoelectric properties of pure and cadmium-and lead-doped neodymium sesquisulfide thin films. Phys. Solid State 48, 1481–1485 (2006). https://doi.org/10.1134/S1063783406080105
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DOI: https://doi.org/10.1134/S1063783406080105