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Influence of additional Zn impurity on the photoluminescence spectra of GaN wurtzite crystals doped with Eu ions

  • Semiconductors and Dielectrics
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Abstract

The introduction of an additional Zn impurity (codopant) significantly increases the emission intensity in the short-wavelength spectral range in Eu-doped GaN crystals. The substantial increase in the emission intensity (at λ=400−450 nm) in crystals with p-type conductivity is caused by radiative intracenter f-f transitions characteristic of Eu3+ ions. For n-GaN crystals with a high degree of compensation by shallow impurities, additional doping with Zn causes only an increase in the intensity of the donor-acceptor recombination band.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    M. M. Mezdrogina & V. V. Krivolapchuk

Authors
  1. M. M. Mezdrogina
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  2. V. V. Krivolapchuk
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Additional information

Original Russian Text © M.M. Mezdrogina, V.V. Krivolapchuk, 2006, published in Fizika Tverdogo Tela, 2006, Vol. 48, No. 7, pp. 1182–1186.

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Mezdrogina, M.M., Krivolapchuk, V.V. Influence of additional Zn impurity on the photoluminescence spectra of GaN wurtzite crystals doped with Eu ions. Phys. Solid State 48, 1250–1254 (2006). https://doi.org/10.1134/S1063783406070067

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  • DOI: https://doi.org/10.1134/S1063783406070067

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