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Structure of complexes responsible for radiation-stimulated softening of silicon single crystals

  • Defects, Dislocations, and Physics of Strength
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Abstract

The rate of the radiation-stimulated change in the microhardness of silicon single crystals exposed to irradiation with a low-intensity flux of beta particles (105 < I < 2.9 × 106 cm−2 s−1) is studied as a function of the radiation intensity. The temperature is determined at which the microhardness H = H τ reached in a time τ under low-intensity beta irradiation regains its initial value H 0. The results obtained indicate that complexes containing two vacancies play a dominant role in the radiation-stimulated softening of silicon single crystal

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Authors and Affiliations

  1. Tambov State University, Internatsional’naya ul. 33, Tambov, 392622, Russia

    Yu. I. Golovin, A. A. Dmitrievskiĭ & N. Yu. Suchkova

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  1. Yu. I. Golovin
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  2. A. A. Dmitrievskiĭ
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  3. N. Yu. Suchkova
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Additional information

Original Russian Text © Yu.I. Golovin, A.A. Dmitrievskiĭ, N.Yu. Suchkova, 2006, published in Fizika Tverdogo Tela, 2006, Vol. 48, No. 2, pp. 262–265.

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Golovin, Y.I., Dmitrievskiĭ, A.A. & Suchkova, N.Y. Structure of complexes responsible for radiation-stimulated softening of silicon single crystals. Phys. Solid State 48, 279–282 (2006). https://doi.org/10.1134/S1063783406020144

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  • DOI: https://doi.org/10.1134/S1063783406020144

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