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Photoelectron spectroscopy of E′ centers in crystalline and glassy silicon dioxide

  • Defects, Dislocations, and Physics of Strength
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Abstract

Radiation-induced E′ centers in SiO2 were studied to test the possibility of applying optically stimulated electron emission (OSEE) to the spectroscopy of excited states of point defects in dielectrics. The spectral responses of the OSEE of crystalline α quartz and silica glass irradiated by 10-MeV electrons were measured and studied. It was established that volume E′ centers in the crystalline and glassy SiO2 modifications are dominant emission-active defects. Surface E’s (1) centers were also detected in glassy SiO2. A model of the energy structure of E′ centers accounting for the absence of luminescence and taking into account the presence of two nonradiative (intracenter and ionization) relaxation channels is proposed. This model was used to explain the mechanism of photothermal decay of the E′ centers and to determine the ionization activation barriers and quantum yields of these centers. The emission, spectral, and kinetic parameters of the volume and surface E′ centers in glassy SiO2 were obtained, showing the excited states of these defects to have identical atomic configurations.

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References

  1. Defects in SiO 2 and Related Dielectrics: Science and Technology, Ed. by G. Paccioni, L. Skuja, and D. L. Griscom (Kluwer, Dordrecht, 2000).

    Google Scholar 

  2. Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide, Ed. by R. A. B. Devine, J. P. Duraud, and E. Dooryhe, (Wiley, New York, 2000).

    Google Scholar 

  3. L. N. Skuja, J. Non-Cryst. Solids 239, 16 (1998).

    Article  Google Scholar 

  4. S. M. Brekhovskikh and V. L. Tyul’nin, Radiation-Induced Centers in Inorganic Glasses (Energoatomizdat, Moscow, 1988) [in Russian].

    Google Scholar 

  5. D. Yu. Biryukov, A. F. Zatsepin, and V. S. Kortov, Fiz. Khim. Stekla 27(4), 503 (2001) [Glass Phys. Chem. 27 (4), 337 (2001)].

    Google Scholar 

  6. R. A. Weeks, J. Appl. Phys. 27, 1376 (1956).

    Article  Google Scholar 

  7. F. J. Feigl and W. B. Fowler, Solid State Commun. 14(3), 225 (1974).

    Article  Google Scholar 

  8. J. K. Rudra and W. B. Fowler, Phys. Rev. B: Condens. Matter 35(15), 8223 (1987).

    ADS  Google Scholar 

  9. K. C. Snyder and W. B. Fowler, Phys. Rev. B: Condens. Matter 48, 13 238 (1993).

    Google Scholar 

  10. D. L. Griscom, Phys. Rev. B: Condens. Matter 22, 4192 (1980).

    ADS  Google Scholar 

  11. A. A. Bobyshev and V. A. Radtsig, Fiz. Khim. Stekla 14(4), 501 (1988).

    Google Scholar 

  12. V. A. Radtsig, Khim. Fiz. 14(8), 125 (1995).

    Google Scholar 

  13. E. H. Poindexter and W. L. Warren, J. Electrochem. Soc. 142, 2508 (1995).

    Google Scholar 

  14. V. S. Kortov, V. A. Gubanov, A. F. Zatsepin, G. B. Cherlov, and S. P. Freidman, Izv. Akad. Nauk SSSR, Ser. Fiz. 49(9), 1841 (1985).

    Google Scholar 

  15. A. F. Zatsepin, V. G. Mazurenko, V. S. Kortov, and V. A. Kalent’ev, Fiz. Tverd. Tela (Leningrad) 30(11), 3472 (1988) [Sov. Phys. Solid State 30 (11), 1993 (1988)].

    Google Scholar 

  16. A. F. Zatsepin, V. I. Ushkova, and V. A. kalent’ev, Poverkhnost, No. 6, 100 (1990).

  17. Y. Kawaguchi and S. Yamamoto, Radiat. Prot. Dosim. 65(1–4), 409 (1996).

    Google Scholar 

  18. V. A. Zakrevskii, Fiz. Khim. Stekla 14(2), 256 (1988).

    Google Scholar 

  19. G. Pacchioni, G. Ierano, and A. M. Marques, Phys. Rev. Lett. 81(2), 377 (1998).

    Article  ADS  Google Scholar 

  20. A. F. Zatsepin, D. Yu. Biryukov, and V. S. Kortov, Latv. J. Phys. Tech. Sci., No. 6, 83 (2000).

  21. V. S. Kortov, A. F. Zatsepin, and D. Yu. Biryukov, Photostimulated Exoelectron Emission Spectroscopy of Optically Active Defects on the Surface of Materials: Methodological Aspects (Ural State Technical University-Ural Polytechnical Institute, Yekaterinburg, 2001) [in Russian].

    Google Scholar 

  22. Kh. F. Kyaémbre, A. I. Belkind, V. V. Bichevin, and A. A. Kask, Radiotekh. Élektron. (Moscow) 14(12), 2216 (1969).

    Google Scholar 

  23. A. F. Zatsepin, V. S. Kortov, and Yu. V. Shchapova, Radiotekh. Élektron. (Moscow) 37(2), 326 (1992).

    Google Scholar 

  24. I. A. Weinstein, A. F. Zatsepin, and V. S. Kortov, Latv. J. Phys. Tech. Sci., No. 6, 68 (2000).

  25. V. A. Gubanov, A. F. Zatsepin, V. S. Kortov, S. P. Freidman, and G. B. Cherlov, Zh. Prikl. Spektrosk. 49(1), 97 (1988).

    Google Scholar 

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Authors and Affiliations

  1. Ural State Technical University (UPI), ul. Mira 19, Yekaterinburg, 620002, Russia

    A. F. Zatsepin, D. Yu. Biryukov & V. S. Kortov

Authors
  1. A. F. Zatsepin
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  2. D. Yu. Biryukov
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  3. V. S. Kortov
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Additional information

Original Russian Text © A.F. Zatsepin, D.Yu. Biryukov, V.S. Kortov, 2006, published in Fizika Tverdogo Tela, 2006, Vol. 48, No. 2, pp. 229–238.

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Zatsepin, A.F., Biryukov, D.Y. & Kortov, V.S. Photoelectron spectroscopy of E′ centers in crystalline and glassy silicon dioxide. Phys. Solid State 48, 245–254 (2006). https://doi.org/10.1134/S1063783406020090

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  • DOI: https://doi.org/10.1134/S1063783406020090

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