Abstract
The results obtained in our previous work [4] are revised taking into account the dependence of the electron affinity on the polytype of silicon carbide SiC. The dependence of the energy level of vacancies in a polytype of silicon carbide on the band gap is determined from the data on the Schottky barrier height and is explained in the framework of a simple two-band model.
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Original Russian Text © S.Yu. Davydov, O.V. Posrednik, 2006, published in Fizika Tverdogo Tela, 2006, Vol. 48, No. 2, pp. 218–219.