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Two-band conduction in TiO2

  • Semiconductors and Dielectrics
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Abstract

The contribution of electrons and holes to the electrical conduction of titanium dioxide TiO2 in the Si/TiO2/Al structure is determined in experiments on the injection of minority carriers from n-type and p-type silicon layers. It is established that both electrons and holes contribute to electrical conduction of the titanium dioxide layer in the Si/TiO2/Al structure; i.e., the electrical conduction of titanium dioxide has a two-band nature.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    D. V. Gritsenko, S. S. Shaĭmeev, V. V. Atuchin, T. I. Grigor’eva, L. D. Pokrovskiĭ, O. P. Pchelyakov, V. A. Gritsenko & A. L. Aseev

  2. Institute of Automatics and Control Processes, Far East Division, Russian Academy of Sciences, Vladivostok, 690041, Russia

    V. G. Lifshits

Authors
  1. D. V. Gritsenko
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  2. S. S. Shaĭmeev
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  3. V. V. Atuchin
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  4. T. I. Grigor’eva
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  5. L. D. Pokrovskiĭ
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  6. O. P. Pchelyakov
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  7. V. A. Gritsenko
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  8. A. L. Aseev
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  9. V. G. Lifshits
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Additional information

Original Russian Text © D.V. Gritsenko, S.S. Shaĭmeev, V.V. Atuchin, T.I. Grigor’eva, L.D. Pokrovskiĭ, O.P. Pchelyakov, V.A. Gritsenko, A.L. Aseev, V.G. Lifshits, 2006, published in Fizika Tverdogo Tela, 2006, Vol. 48, No. 2, pp. 210–213.

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Gritsenko, D.V., Shaĭmeev, S.S., Atuchin, V.V. et al. Two-band conduction in TiO2 . Phys. Solid State 48, 224–228 (2006). https://doi.org/10.1134/S1063783406020053

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  • DOI: https://doi.org/10.1134/S1063783406020053

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