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Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers MoxW1–xSe2/WSe2

  • XXVIII INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”, MINSK, REPUBLIC OF BELARUS, SEPTEMBER, 2020. EXCITONS IN NANOSTRUCTURES
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—We study spin-valley relaxation dynamics in two-dimensional MoxW1–xSe2/WSe2 heterobilayers with different relative Mo/W concentration x in the monolayer alloy. Three types of heterobilayers with x = 1.00, 0.50, 0.33 are studied in time-resolved Kerr rotation experiments for different wavelengths and temperatures. The spin-valley relaxation times are found to decrease from ~10 nanoseconds for x = 1.00 to ~50 ps for x = 0.33. The observed relaxation times are limited by the recombination of indirect excitons formed in the heterobilayers. Our results demonstrate that spin-valley relaxation in alloy-based van der Waals heterostructures can be controlled via their chemical composition.

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ACKNOWLEDGMENTS

The authors acknowledge Saint-Petersburg State University for a research Grant no. 51125686 and the group of Prof. Alexander Tartakovskii for providing several TMD heterostructure samples. V.K. acknowledges funding from RFBR according to project no. 19-52-51010.

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Correspondence to A. D. Liubomirov, V. Kravtsov or R. V. Cherbunin.

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Liubomirov, A.D., Kravtsov, V. & Cherbunin, R.V. Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers MoxW1–xSe2/WSe2 . Semiconductors 54, 1518–1521 (2020). https://doi.org/10.1134/S1063782620110196

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  • DOI: https://doi.org/10.1134/S1063782620110196

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