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Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation

  • XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019
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Abstract

It is found that exciton-polariton systems resonantly excited in GaAs semiconductor microcavities by coherent picosecond laser pulses inherit the high coherence of the laser beam and retain it for their lifetime (>100 ps), while the coherence-formation time in polariton systems resonantly excited by incoherent pulses without excitation of the exciton reservoir exceeds 200 ps.

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ACKNOWLEDGMENTS

We are grateful to S.S. Gavrilov and N.A. Gippius for fruitful discussions and P. Savvidis and S. Höfling for the high-Q MC structures.

Funding

This study was carried out in the framework of the state assignment for the Institute of Solid State Physics, Russian Academy of Sciences and was supported by the Presidium of the Russian Academy of Sciences, Program No. 9 “Terahertz Optoelectronics and Spintronics”.

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Authors and Affiliations

  1. Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow Region, Russia

    V. D. Kulakovskii & A. A. Demenev

  2. National Research University Higher School of Economics, 101000, Moscow, Russia

    V. D. Kulakovskii

Authors
  1. V. D. Kulakovskii
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  2. A. A. Demenev
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Correspondence to V. D. Kulakovskii.

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The authors declare no conflict of interest.

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Translated by M. Skorikov

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Kulakovskii, V.D., Demenev, A.A. Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation. Semiconductors 53, 1308–1313 (2019). https://doi.org/10.1134/S1063782619100129

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