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Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors

  • XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019
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Abstract

Experimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly polarized radiation onto the sample surface are reviewed. The experiments were carried out on GaAs1 –xNx solid solutions, in which Ga2+ interstitial displacement defects play the role of deep paramagnetic centers responsible for spin-dependent recombination. It is established that, in the investigated materials, the hyperfine interaction of a localized electron with one nucleus of the paramagnetic center remains strong even at room temperature. The theory is compared with an experiment conducted in the steady-state excitation mode and under two-pulse pump-probe conditions. An analytical formula for spin beats in a magnetic field is derived.

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ACKNOWLEDGMENTS

We are grateful to L.A. Bakaleinikov for fruitful discussion of the manuscript.

Funding

This study was supported in part by the Russian Foundation for Basic Research, project no. 17-52-16020. The work of A.B., X.M. and T.A. was partially supported by Programme Investissements d’Avenir under the program ANR-11-IDEX-0002-02, reference ANR-10-LABX-0037-NEXT. A.K. gratefully appreciates the financial support of Departamento de Ciencias Básicas UAM-A Grants no. 2232214 and No. 2232215.

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Correspondence to E. L. Ivchenko.

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Translated by E. Bondareva

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Ivchenko, E.L., Kalevich, V.K., Kunold, A. et al. Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors. Semiconductors 53, 1175–1181 (2019). https://doi.org/10.1134/S1063782619090070

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  • DOI: https://doi.org/10.1134/S1063782619090070

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