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Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas

Abstract

We report the effect of total carrier gas flow of GaN during both GaN nucleation layer and high temperature GaN growth steps on structural, optical, electrical and morphological properties. The formation of dislocations in GaN layer and their effects were investigated in detail as a function of carrier gas flow. It has been found that the more carrier gas requires longer recovery time for transition from 3D (3 dimensional) to 2D growth and results in smaller edge-type dislocation density. The images obtained from the AFM measurements have shown terraces widths varying between 60–150 nm depending on the hydrogen flow rate.

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ACKNOWLEDGMENTS

The authors acknowledge the usage of Nanophotonics Research and Application Center at Cumhuriyet University (CUNAM) facilities. This work is supported by the TUBITAK under project nos. 113G103 and 115E109 and by Scientific Research Project Fund of Cumhuriyet University under the project number M-699. The authors thank Ms. A. Alev Kizilbulut from ERMAKSAN Optoelectronics for room temperature PL measurements.

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Correspondence to S. Elagoz.

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Demir, I., Altuntas, I., Kasapoğlu, A.E. et al. Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas. Semiconductors 52, 2030–2038 (2018). https://doi.org/10.1134/S1063782618160066

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  • DOI: https://doi.org/10.1134/S1063782618160066

Keywords:

  • metalorganic vapor phase epitaxy
  • gallium nitride
  • epitaxy
  • dislocation