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Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas

Semiconductors volume 52, pages 2030–2038 (2018)Cite this article

Abstract

We report the effect of total carrier gas flow of GaN during both GaN nucleation layer and high temperature GaN growth steps on structural, optical, electrical and morphological properties. The formation of dislocations in GaN layer and their effects were investigated in detail as a function of carrier gas flow. It has been found that the more carrier gas requires longer recovery time for transition from 3D (3 dimensional) to 2D growth and results in smaller edge-type dislocation density. The images obtained from the AFM measurements have shown terraces widths varying between 60–150 nm depending on the hydrogen flow rate.

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REFERENCES

  1. H. Morkoç, Nitride Semiconductor Devices: Fundamentals and Applications (Wiley, Weinheim, 2013).

    Book  Google Scholar 

  2. M. Razeghi, IEEE Photon. J. 3, 263 (2011).

    ADS  Article  Google Scholar 

  3. S. Kolluri, Y. Pei, S. Keller, S. P. Denbaars, and U. K. Mishra, IEEE Electron Dev. Lett. 30, 584 (2009).

    ADS  Article  Google Scholar 

  4. Q. Cai, M. Ge, J. Xue, L. Hu, D. Chen, H. Lu, R. Zhang, and Y. Zheng, IEEE Photon. J. 9, 6803507 (2017).

    Google Scholar 

  5. M. Kneissl and J. Rass, III-Nitride Ultraviolet Emitters Technology and Applications (Springer, London, 2016).

    Book  Google Scholar 

  6. H. Jeong, R. S. Montiel, G. Lerondel, and M. S. Jeong, Sci. Rep. 7, 6803507 (2017).

    Google Scholar 

  7. I. Demir, Y. Robin, R. McClintock, S. Elagoz, K. Zekentes, and M. Razeghi, Phys. Status Solidi A 214, 1600363 (2017).

    ADS  Article  Google Scholar 

  8. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).

    ADS  Article  Google Scholar 

  9. L. Shang, T. Lu, G. Zhai, Z. Jia, H. Zhang, S. Ma, T. Li, J. Liang, X. Liu, and B. Xu, RSC Adv. 5, 51201 (2015).

  10. B. P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. Denbaars, J. Electron. Mater. 24, 1707 (1995).

    ADS  Article  Google Scholar 

  11. M. S. Yi, H. H. Lee, D. J. Kim, S. J. Park, D. Y. Noh, C. C. Kim, and J. H. Je, Appl. Phys. Lett. 75, 2187 (1999).

    ADS  Article  Google Scholar 

  12. A. E. Wickenden, D. D. Koleske, R. L. Henry, R. J. Gorman, M. E. Twigg, M. Fatemi, J. A. Freitas, and W. J. Moore, J. Electron. Mater. 29, 21 (2000).

    ADS  Article  Google Scholar 

  13. T. Ito, M. Sumiya, Y. Takano, K. Ohtsuka, and S. Fuke, Jpn. J. Appl. Phys. 38, 649 (1999).

    ADS  Article  Google Scholar 

  14. S. Kim, J. Oh, J. Kang, D. Kim, J. Won, J. W. Kim, and H. K. Cho, J. Cryst. Growth 262, 7 (2004).

    ADS  Article  Google Scholar 

  15. I. Altuntas, I. Demir, A. E. Kasapoğlu, S. Mobtakeri, E. Gür, and S. Elagoz, J. Phys. D: Appl. Phys. 51, 035105 (2018).

    ADS  Article  Google Scholar 

  16. J. Han, T. B. Ng, R. M. Biefeld, M. H. Crawford, and D. M. Follstaedt, Appl. Phys. Lett. 71, 3114 (1997).

    ADS  Article  Google Scholar 

  17. H. X. Wang, Y. Amijima, Y. Ishihama, and S. Sakai, J. Cryst. Growth 233, 681 (2001).

    ADS  Article  Google Scholar 

  18. Y. S. Cho, H. Hardtdegen, N. Kaluza, N. Thillosen, R. Steins, Z. Sofer, and H. Lüth, Phys. Status Solidi C 3, 1408 (2006).

    ADS  Article  Google Scholar 

  19. A. S. Barker, Jr. and M. Ilegems, Phys. Rev. B 7, 743 (1973).

    ADS  Article  Google Scholar 

  20. T. Böttcher, S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and J. S. Speck, Appl. Phys. Lett. 78, 1976 (2001).

    ADS  Article  Google Scholar 

  21. R. S. Q. Fareed, S. Juodkazis, S. H. Chung, T. Sugahara, and S. Sakai, Mater. Chem. Phys. 64, 260 (2000).

    Article  Google Scholar 

  22. T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda, Appl. Phys. Lett. 76, 3421 (2000).

    ADS  Article  Google Scholar 

  23. J. H. Ryu, Y. S. Katharria, H. Y. Kim, H. K. Kim, K. B. Ko, N. Han, J. H. Kang, Y. J. Park, E.-K. Suh, and C.-H. Hong, Appl. Phys. Lett. 100, 181904 (2012).

    ADS  Article  Google Scholar 

  24. A. H. Park, T. H. Seo, S. Chandramohan, G. H. Lee, K. H. Min, S. Lee, M. J. Kim, Y. G. Hwang, and E. K. Suh, Nanoscale 7, 15099 (2015).

    ADS  Article  Google Scholar 

  25. M. Qi, G. Li, V. Protasenko, P. Zhao, J. Verma, B. Song, S. Ganguly, M. Zhu, Z. Hu, X. Yan, A. Mintairov, H. Grace Xing, and D. Jena, Appl Phys. Lett. 106, 041906 (2015).

    ADS  Article  Google Scholar 

  26. M. Mishra, T. C. S. Krishna, N. Aggarwal, and G. Gupta, Appl. Surf. Sci. 345, 440 (2015).

    ADS  Article  Google Scholar 

  27. R. Y. Korotkov, F. Niu, J. M. Gregie, and B. W. Wessels, Phys. B (Amsterdam, Neth.) 308, 26 (2001).

  28. H. Wang, Y. Huang, Q. Sun, J. Chen, L. L. Wang, J. J. Zhu, D. G. Zhao, S. M. Zhang, D. S. Jiang, Y. T. Wang, and H. Yang, Appl. Phys. Lett. 89, 092114 (2006).

    ADS  Article  Google Scholar 

  29. T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda, Appl. Phys. Lett. 76, 3421 (2000).

    ADS  Article  Google Scholar 

  30. L. Macht, J. L. Weyher, A. Grzegorczyk, and P. K. Larsen, Phys. Rev. B 71, 073309 (2005).

    ADS  Article  Google Scholar 

  31. D. G. Zhao, D. S. Jiang, Hui Yang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, X. Li, X. Y. Li, and H. M. Gong, Appl. Phys. Lett. 88, 241917 (2006).

    ADS  Article  Google Scholar 

  32. F. Schubert, S. Wirth, F. Zimmermann, J. Heitmann, and T. M. S. Schmult, Sci. Technol. Adv. Mater. 17, 239 (2016).

    Article  Google Scholar 

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ACKNOWLEDGMENTS

The authors acknowledge the usage of Nanophotonics Research and Application Center at Cumhuriyet University (CUNAM) facilities. This work is supported by the TUBITAK under project nos. 113G103 and 115E109 and by Scientific Research Project Fund of Cumhuriyet University under the project number M-699. The authors thank Ms. A. Alev Kizilbulut from ERMAKSAN Optoelectronics for room temperature PL measurements.

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Authors and Affiliations

  1. Department of Nanotechnology Engineering, Nanophotonics Research and Application Center Cumhuriyet University, 58140, Sivas, Turkey

    I. Demir, I. Altuntas & S. Elagoz

  2. East Anatolia High Technology Application and Research Center, Atatürk University, 25240, Erzurum, Turkey

    A. E. Kasapoğlu, S. Mobtakeri & E. Gür

  3. Department of Physics, Faculty of Science, Ataturk University, 25250, Erzurum, Turkey

    E. Gür

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  1. I. Demir
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  2. I. Altuntas
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  3. A. E. Kasapoğlu
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  4. S. Mobtakeri
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  5. E. Gür
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  6. S. Elagoz
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Correspondence to S. Elagoz.

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Demir, I., Altuntas, I., Kasapoğlu, A.E. et al. Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas. Semiconductors 52, 2030–2038 (2018). https://doi.org/10.1134/S1063782618160066

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  • DOI: https://doi.org/10.1134/S1063782618160066

Keywords:

  • metalorganic vapor phase epitaxy
  • gallium nitride
  • epitaxy
  • dislocation