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Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

A heterostructure promising for designing a backward diode is formed from a zinc-oxide nanorod array and a nanostructured copper-iodide film. The effect of modes of successive ionic layer adsorption and reaction (SILAR) deposition and the subsequent iodization of CuI films on smooth glass, mica, and fluorine-doped tin oxide (FTO) substrates and on the surface of electrodeposited nanostructured zinc-oxide arrays on the film structure and electrical and optical properties is investigated. A connection between the observed variations in the structure and properties of this material and intrinsic and iodination-induced point defects is established. It is found that the cause and condition for creating a backward-diode heterostructure based on a zinc-oxide nanoarray formed by pulsed electrodeposition and a copper-iodide film grown by the SILAR method is the formation of a p+-CuI degenerate semiconductor by the excessive iodination of layers of this nanostructured material through its developed surface. The n-ZnO/p+-CuI barrier heterostructure, which is fabricated for the first time, has the I–V characteristic of a backward diode, the curvature factor of which (γ = 12 V–1) confirms its high Q factor.

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Author information

Authors and Affiliations

  1. National Technical University “Kharkiv Polytechnic Institute”, 61001, Kharkiv, Ukraine

    N. P. Klochko, V. R. Kopach, G. S. Khrypunov, V. E. Korsun, V. M. Lyubov, D. O. Zhadan, A. N. Otchenashko, M. V. Kirichenko & M. G. Khrypunov

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  1. N. P. Klochko
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  2. V. R. Kopach
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  3. G. S. Khrypunov
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  4. V. E. Korsun
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  5. V. M. Lyubov
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  6. D. O. Zhadan
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  7. A. N. Otchenashko
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  8. M. V. Kirichenko
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  9. M. G. Khrypunov
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Correspondence to N. P. Klochko.

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Translated by E. Bondareva

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Klochko, N.P., Kopach, V.R., Khrypunov, G.S. et al. Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method. Semiconductors 52, 1203–1214 (2018). https://doi.org/10.1134/S1063782618090063

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